Spin dynamics in superconductor/ferromagnetic insulator hybrid structures with precessing magnetization

• Yaroslav V. Turkin and
• Nataliya Pugach

Beilstein J. Nanotechnol. 2023, 14, 233–239, doi:10.3762/bjnano.14.22

• Yaroslav V. Turkin Nataliya Pugach HSE University, Moscow 101000, Russia Vernadsky Crimean Federal University, Simferopol 295007 10.3762/bjnano.14.22 Abstract The main goal of the present work is the description of the dynamics of spin current and induced magnetization inside a superconducting

• film S that is in contact with a ferromagnetic insulator layer FI. Spin current and induced magnetization are calculated not only at the interface of the S/FI hybrid structure, but also inside the superconducting film. The new and interesting predicted effect is the frequency dependence of the induced

• ways of spin current injection into a superconductor, for example, the spin Hall effect [5], the spin Seebek effect [6], and ferromagnetic resonance spin pumping [7][8]. The spin pumping technique in hybrid structures consisting of a ferromagnetic insulator and a superconductor is considered to be the

Tunable superconducting neurons for networks based on radial basis functions

• Andrey E. Schegolev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Igor I. Soloviev,
• Mikhail Yu. Kupriyanov,
• Maxim V. Tereshonok and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2022, 13, 444–454, doi:10.3762/bjnano.13.37

• example). The control of the spin valve is operated by turning the FM layers into states with parallel (P) and antiparallel (AP) mutual orientations of their magnetizations. This process can be realized by application of the finite external magnetic field or by injection of the spin current due to the

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• . There are theoretical studies that suggest the possibility of manipulating the AF moment by spin transfer torque [12][13][14]. Only recently, FM/AF (NiO, IrMn)/heavy metal heterostructures have been extensively studied to demonstrate the efficient spin current transfer across the AF layer mediated by AF

• via conduction electrons and also by the propagation of magnetic excitations. FMR measurements are used to quantify magnetic damping, which is directly associated with the interaction between AF moments and spin current. The magnitude of the effective Gilbert damping constant (αeff) of trilayers shows

• interaction between spin current and AF magnetic moment. Figure 2 shows characteristic FMR spectra of the trilayer sample series recorded at 9 GHz. For tIrMn ≤ 6 nm, only one spectral peak is observed. It indicates the presence of a long-range dynamic exchange coupling between the two CoFeB layers across the

Interplay between pairing and correlations in spin-polarized bound states

• Szczepan Głodzik,
• Aksel Kobiałka,
• Anna Gorczyca-Goraj,
• Andrzej Ptok,
• Grzegorz Górski,
• Maciej M. Maśka and
• Tadeusz Domański

Beilstein J. Nanotechnol. 2018, 9, 1370–1380, doi:10.3762/bjnano.9.129

• Green’s functions can be computed numerically from the solution of the Bogoliubov–de Gennes equations of this model (Equation 10). The net spin current turns out to be predominantly sensitive to the Majorana end-modes. Its differential conductance can thus distinguish the polarized Majorana

Spin-dependent transport and functional design in organic ferromagnetic devices

• Guichao Hu,
• Shijie Xie,
• Chuankui Wang and
• Carsten Timm

Beilstein J. Nanotechnol. 2017, 8, 1919–1931, doi:10.3762/bjnano.8.192

• interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each

• phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments. Keywords: magnetoresistance; organic ferromagnet; spin-current rectification; spin

• focus on three concepts that are interesting for spintronics, namely spin filtering [31], multi-state magnetoresistance [32], and spin–current rectification [33]. Review SSH model combined with the Green’s function method Generally, an OF device may be constructed by sandwiching the OF molecule between

Spin-chemistry concepts for spintronics scientists

• Konstantin L. Ivanov,
• Alexander Wagenpfahl,
• Carsten Deibel and
• Jörg Matysik

Beilstein J. Nanotechnol. 2017, 8, 1427–1445, doi:10.3762/bjnano.8.143

• thin organic semiconductor layer is sandwiched between two ferromagnetic electrodes [24]. A spin-polarized current is injected from one of these electrodes and transported through the semiconductor. Another type also implements spin current, but without charge current, in the structure ferromagnetic

Production, detection, storage and release of spin currents

• Michele Cini

Beilstein J. Nanotechnol. 2015, 6, 736–743, doi:10.3762/bjnano.6.75

• the connection is not symmetric. Moreover, properly connected rings can be used to pump currents in the wires giving raise to a number of interesting new phenomena. At half filling using a time-dependent magnetic field in the plane of the ring one can pump a pure spin current, excited by the the spin

• production of spin currents can be a useful alternative to optical excitation and electric field methods. Keywords: quantum pumping; quantum transport; spin current; Introduction The time-honored field of quantum transport has been evolving in the past 15 years in such a way that spin–orbit interaction

• just charge. In principle, quantum mechanics allows us to build a device to achieve that in more than one way. One can also build a ring device that can produce a pure spin current, that is, a magnetic current without any charge current associated to it [12]. In the present paper, I concentrate on the

Charge and spin transport in mesoscopic superconductors

• M. J. Wolf,
• F. Hübler,
• S. Kolenda and
• D. Beckmann

Beilstein J. Nanotechnol. 2014, 5, 180–185, doi:10.3762/bjnano.5.18

• spin orientations. The conductance is then given by the sum g↓ + g↑, whereas the spin current is proportional to the difference g↓ − g↑. The lines in Figure 3b are the sum of the charge-imbalance contribution shown in Figure 3a and an additional contribution to account for the spin signal. For the